HSpice Tutorial 8 - Using Different active devices in netlist

Diode Element

 Dxxx n+ n- mname <area> <initialstate>

Example: D1 1 2 diode1 10 off
Here Di is diode name, 1 is +ve terminal, 2 is -ve terminal, mnane is model name which is diode1 area is diode active area which affects your parameters which is 10 and initial state of diode is off.

 BJT Element

Qxxx nc nb ne<ns> mname<AREA=area>

Example:  Q1 1 2 3 model_1 10
Here Q1 is bjt name, 1 is connected ti collector, 2 base, 3 emitter, mname is model name i.e. model_1 and area is 10.

MOSFET Element

Mxxx nd ng ns<nb> mname<width> <length>

Example: M1 1 2 3 mosmodel W=1u L=2u
Here M1 is mos name, 1 is node connected to drain, 2 gate, 3 source, mname is mosmodel and width and length of mosfet are specified.

NOTE: The parameters inside "<>" are not necesary to be mentioned and they are extra parameters defining your model.

These models are then associated with model libraries in HSpice.

By using the respective active element mnane a model library is defined as:

.model mname <type> <level> <other specific options needed>

Examples:
MOSFET example

M1 1 2 3 mosmodel W=1u L=2u  $this is MOS element
.model mosmodel nmos level=1     $this is model library

Here, mosmodel is associated with NMOS library which is Level=1.
Levels are ranging from 1 to 60 for a MOSFET, and as the level increases non-linearity of device increases usually. Each level describes diferent MOSFET parameters.

Similar type of modeling is carried for all active devices.

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